Journal
IEEE JOURNAL OF PHOTOVOLTAICS
Volume 11, Issue 1, Pages 26-35Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOTOV.2020.3031382
Keywords
Silicon; Temperature measurement; Passivation; Annealing; Degradation; Plasma temperature; Nitrogen; Defects; deep level transient spectroscopy (DLTS); float-zone (FZ); lifetime; recombination; silicon
Funding
- Australian Government through Australian Centre for Advanced Photovoltaics [RG200768-G]
- Australian Renewable Energy Agency [2017/RND001]
- EPSRC [EP/M024911/1, EP/J01768X/2]
- International and Industrial Engagement Fund of the EPSRC SUPERSOLAR Solar Energy Hub [EP/J017361/1]
- U.K. EPSRC [EP/M024911/1, EP/T025131/1]
- Government of the Philippines through theDepartment of Science and Technology
- EPSRC [EP/M024911/1, EP/J01768X/2] Funding Source: UKRI
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Recent studies have shown that detrimental defects in Float-zone silicon wafers can lead to a significant reduction in carrier lifetime. By combining different characterization techniques and passivation schemes, key defects causing degradation in silicon materials are identified and their parameters are extracted and discussed.
Float-zone (FZ) silicon is usually assumed to be bulk defect-lean and stable. However, recent studies have revealed that detrimental defects can be thermally activated in FZ silicon wafers and lead to a reduction of carrier lifetime by up to two orders of magnitude. A robust methodology which combines different characterization techniques and passivation schemes is used to provide new insight into the origin of degradation of 1 omega center dot cm n-type phosphorus doped FZ silicon (with nitrogen doping during growth) after annealing at 500 degrees C. Carrier lifetime and photoluminescence experiments are first performed with temporary room temperature surface passivation which minimizes lifetime changes which can occur during passivation processes involving thermal treatments. Temperature- and injection-dependent lifetime spectroscopy is then performed with a more stable passivation scheme, with the same samples finally being studied by deep level transient spectroscopy (DLTS). Although five defect levels are found with DLTS, detailed analysis of injection-dependent lifetime data reveals that the most detrimental defect levels could arise from just two independent single-level defects or from one two-level defect. The defect parameters for these two possible scenarios are extracted and discussed.
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