4.6 Article

Anisotropic Resistivity Surfaces Produced in ITO Films by Laser-Induced Nanoscale Self-organization

Journal

ADVANCED OPTICAL MATERIALS
Volume 9, Issue 2, Pages -

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adom.202001086

Keywords

anisotropy; fs‐ laser processing; indium tin oxide; laser‐ induced periodic surface structures; resistivity; transparent conductive oxides

Funding

  1. Spanish Ministry of Science, Innovation and Universities
  2. Spanish Research Agency (AEI, Ministry of Research and Innovation)
  3. European Regional Development Fund (ERDF) [TEC2017-82464-R, PID2019-109603RA-I00, PID2019-110430GB-C21]
  4. Consejeria de Economia y Conocimiento de la Junta de Andalucia [P18-RT-3480, P18-RT-6079]
  5. Consejo Superior de Investigaciones Cientificas for the Intramural Project [201850E057]
  6. University of Seville through the VI Plan Propio de Investigacion y Transferencia de la US (VI PPIT-US)
  7. Juan de la Cierva Incorporacion [IJCI-2017-33317]
  8. European Commission through the Marie Curie Global Fellowship [844977]
  9. European Commission/Junta de Andalucia Talent-Hub Program
  10. Marie Curie Actions (MSCA) [844977] Funding Source: Marie Curie Actions (MSCA)

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Highly anisotropic resistivity surfaces are produced in indium tin oxide (ITO) films by nanoscale self-organization upon irradiation with a fs-laser beam operating at 1030 nm. Two types of optimized structures are observed, showing different electrical properties depending on the fluence. The compositional changes induced by laser pulses accumulation condition the LIPSS evolution and result of the structuring process.
Highly anisotropic resistivity surfaces are produced in indium tin oxide (ITO) films by nanoscale self-organization upon irradiation with a fs-laser beam operating at 1030 nm. Anisotropy is caused by the formation of laser-induced periodic surface structures (LIPSS) extended over cm-sized regions. Two types of optimized structures are observed. At high fluence, nearly complete ablation at the valleys of the LIPSS and strong ablation at their ridges lead to an insulating structure in the direction transverse to the LIPSS and conductive in the longitudinal one. A strong diminution of In content in the remaining material is then observed, leading to a longitudinal resistivity rho(L) approximate to 1.0 omega center dot cm. At a lower fluence, the material at the LIPSS ridges remains essentially unmodified while partial ablation is observed at the valleys. The structures show a longitudinal conductivity two times higher than the transverse one, and a resistivity similar to that of the pristine ITO film (rho approximate to 5 x 10(-4) omega center dot cm). A thorough characterization of these transparent structures is presented and discussed. The compositional changes induced as laser pulses accumulate, condition the LIPSS evolution and thus the result of the structuring process. Strategies to further improve the achieved anisotropic resistivity results are also provided.

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