Journal
NANO-MICRO LETTERS
Volume 13, Issue 1, Pages -Publisher
SHANGHAI JIAO TONG UNIV PRESS
DOI: 10.1007/s40820-020-00557-4
Keywords
Phase-change memory; High speed; Ta; High-temperature operation
Funding
- National Key Research and Development Program of China [2017YFA0206101, 2017YFB0701703, 2017YFA0206104, 2017YFB0405601, 2018YFB0407500]
- National Natural Science Foundation of China [91964204, 61874178, 61874129]
- Science and Technology Council of Shanghai [20501120300, 18DZ2272800]
- Shanghai Sailing Program [19YF1456100]
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Phase-change memory based on Ta-doped antimony telluride (Sb2Te) exhibits high-speed characteristics and excellent high-temperature characteristics, with good thermal stability and long-term endurance through the formation of small grains.
HighlightsPhase-change memory based on Ta-doped antimony telluride (Sb2Te) exhibits both high-speed characteristics and excellent high-temperature characteristics, allowing improved performance and new applications.The high coordination number of Ta and the strong bonds between Ta and Sb/Te atoms enhance the robustness of the amorphous structure, ensuring good thermal stability.Through the three-dimensional limit, the formation of small grains reduces the power consumption and improves the long-term endurance. AbstractPhase-change memory (PCM) has considerable promise for new applications based on von Neumann and emerging neuromorphic computing systems. However, a key challenge in harnessing the advantages of PCM devices is achieving high-speed operation of these devices at elevated temperatures, which is critical for the efficient processing and reliable storage of data at full capacity. Herein, we report a novel PCM device based on Ta-doped antimony telluride (Sb2Te), which exhibits both high-speed characteristics and excellent high-temperature characteristics, with an operation speed of 2 ns, endurance of>10(6) cycles, and reversible switching at 140 degrees C. The high coordination number of Ta and the strong bonds between Ta and Sb/Te atoms contribute to the robustness of the amorphous structure, which improves the thermal stability. Furthermore, the small grains in the three-dimensional limit lead to an increased energy efficiency and a reduced risk of layer segregation, reducing the power consumption and improving the long-term endurance. Our findings for this new Ta-Sb2Te material system can facilitate the development of PCMs with improved performance and novel applications.
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