4.7 Article

Dual-functional quantum-dots light emitting diodes based on solution processable vanadium oxide hole injection layer

Journal

SCIENTIFIC REPORTS
Volume 11, Issue 1, Pages -

Publisher

NATURE PORTFOLIO
DOI: 10.1038/s41598-021-81480-5

Keywords

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Funding

  1. Kyung Hee Univeristy [KHU-20181299]
  2. National Research Foundation of Korea [5120200113702] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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Dual-functional quantum-dot light emitting diodes (QLEDs) were successfully fabricated using solution processable vanadium oxide (V2O5) hole injection layer, showing selectable photo-detecting and light-emitting behaviors under different operating voltage conditions. By adjusting the concentration of V2O5 solution, the interfacial electronic structure of the device was modified to enable the dual-functional properties. This study suggests the potential use of QLEDs as both photosensors and light-emitting diodes in the future display industry.
Dual-functional quantum-dots light emitting diodes (QLEDs) have been fabricated using solution processable vanadium oxide (V2O5) hole injection layer to control the carrier transport behavior. The device shows selectable functionalities of photo-detecting and light-emitting behaviors according to the different operating voltage conditions. The device emitted a bright green light at the wavelength of 536 nm, and with the maximum luminance of 31,668 cd/m(2) in a forward bias of 8.6 V. Meanwhile, the device could operate as a photodetector in a reverse bias condition. The device was perfectly turned off in a reverse bias, while an increase of photocurrent was observed during the illumination of 520 nm wavelength light on the device. The interfacial electronic structure of the device prepared with different concentration V2O5 solution was measured in detail using x-ray and ultraviolet photoelectron spectroscopy. Both the highest occupied molecular orbital and the gap state levels were moved closer to the Fermi level, according to increase the concentration of V2O5 solution. The change of gap state position enables to fabricate a dual-functional QLEDs. Therefore, the device could operate both as a photodetector and as a light-emitting diode with different applied bias. The result suggests that QLEDs can be used as a photosensor and as a light-emitting diode for the future display industry.

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