Effects of MOVPE Growth Conditions on GaN Layers Doped with Germanium

The effect of growth temperature and precursor flow on the doping level and surface morphology of Ge-doped GaN layers was researched. The results show that germanium is more readily incorporated at low temperature, high growth rate and high V/III ratio, thus revealing a similar behavior to what was previously observed for indium. V-pit formation can be blocked at high temperature but also at low V/III ratio, the latter of which however causing step bunching.

Automated summary

The research showed that Germanium is more readily incorporated at low temperature, high growth rate and high V/III ratio in Ge-doped GaN layers. V-pit formation can be blocked at high temperature or low V/III ratio, but the latter may cause step bunching.