Journal
MATERIALS
Volume 14, Issue 2, Pages -Publisher
MDPI
DOI: 10.3390/ma14020461
Keywords
gallium arsenide; illumination; supercontinuum; electrical characteristics; xps; Raman spectroscopy; sims
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Funding
- Ministry of Education, Youth and Sports of the Czech Republic under the project CEITEC 2020 [LQ1601]
- Internal Grant Agency of Brno University of Technology [FEKT-S-20-6352]
- CEITEC Nano Research Infrastructure - MEYS CR [LM2018110]
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This work focuses on the degradation of GaAs solar cells under continuous laser irradiation. The solar cells were exposed to intense light for two months, leading to changes in electrical characteristics and structural composition. Analysis using various techniques such as Raman spectroscopy and X-ray photoelectron spectroscopy confirmed displacement of titanium and aluminum atoms, as well as slight redistribution of oxygen bonds in the anti-corrosion coating.
This work is dedicated to the description of the degradation of GaAs solar cells under continuous laser irradiation. Constant and strong exposure of the solar cell was performed over two months. Time-dependent electrical characteristics are presented. The structure of the solar cells was studied at the first and last stages of degradation test. The data from Raman spectroscopy, reflectometry, and secondary ion mass spectrometry confirm displacement of titanium and aluminum atoms. X-ray photoelectron spectroscopy showed a slight redistribution of oxygen bonds in the anti-corrosion coating.
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