Mechanical wear behavior between CeO2(100), CeO2(110), CeO2(111), and silicon studied through atomic force microscopy

Using atomic force microscopy and scanning electron microscopy, the mechanical removal mechanism of silicon with different exposure surfaces of cerium oxide (CeO2) is studied. It is discovered that the main type of mechanical wear between Si and CeO2 is adhesive wear. The silicon removal rate relationship is RR1(CeO2(111))> RR(CeO2(100))> RR(CeO2(110)). Additionally, the relationship of the friction force remains constant: F-2(CeO2(111)) > F(CeO2(110)) > F(CeO2(100)). This is consistent with the ceria wear rate relationship of WR (CeO2(111)) > WR(CeO2(110)) > WR(CeO2(100)). This paper provides a deeper insight into the mechanical material removal mechanism during chemical mechanical polishing processes; thus, providing a reference for CeO2 particle orientation control.

Automated summary

By using atomic force microscopy and scanning electron microscopy, the study investigates the mechanical removal mechanism of silicon with different exposure surfaces of cerium oxide (CeO2). It is found that the main type of mechanical wear between Si and CeO2 is adhesive wear. The relationship between silicon removal rate, friction force, and ceria wear rate with different crystallographic orientations of CeO2 is also explored.