Journal
THIN SOLID FILMS
Volume 718, Issue -, Pages -Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2020.138473
Keywords
Electronic structure; Intermediate band solar cell; Copper silicon sulfide; Nontoxic absorber
Categories
Funding
- National Natural Science Foundation of China [61664003, 61964002]
- Hundred-Talent Program in Guangxi Province and Innovation-Driven Development Foundation of Guangxi Province [AA17204063]
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By doping P in Cu2SiS3, a partially-filled intermediate band is introduced, allowing for the realization of three-photon absorption and increasing the absorption coefficient of Cu2SiS3, enhancing its absorption efficiency in the solar spectrum.
The exploration on the absorber with low cost and nontoxic elements to realize highly efficient solar cells is still under way. Here, P-doped Cu2SiS3 as a cheap and poisonless compound is proposed as a promising absorber for intermediate band solar cell from our first-principles study. After P substituting at Si site in Cu2SiS3, a partially-filled intermediate band is introduced in the forbidden band of Cu2SiS3. Consequently, thanks to the intermediate band served as a stepping stone for the light absorption, the three-photon absorption is realized and then the corresponding absorption coefficient of P-doped Cu2SiS3 can cover the solar light spectrum efficiently.
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