Journal
SOLAR ENERGY
Volume 214, Issue -, Pages 319-325Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.solener.2020.12.008
Keywords
CdTe solar cell; Ultrathin CdS:O layer; Post annealing process; MgZnO buffer
Categories
Funding
- Advanced Solar Power
- National Nature Science Foundation of China [61721005]
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The thickness of the CdS:O window layer is crucial for the performance of CdTe-based thin-film solar cells. Thinner layers enhance short wavelength response but may degrade V-oc and FF. This study demonstrates high efficiency cells with ultrathin CdS:O layers using a post annealing process.
The thickness of the CdS:O window layer plays an important role in CdTe-based thin-film solar cell performance. Normally with thinner CdS:O layer, the cells' short wavelength response can be enhanced to achieve higher short-circuit current density (J(sc)), while the open-circuit voltage (V-oc) and fill factor (FF) would degrade. Previous research finds that reducing the CdS:O layer thickness to less than 40 nm would decrease the cells' efficiency (Eff.). In this work, 18% efficiency CdTe thin-film solar cell with only 30 nm CdS:O window layer is demonstrated. A post annealing process is developed to fabricate high efficiency cells with ultrathin CdS:O layers. Our results indicate that the high defect density in CdTe absorber, low built-in potential (V-bi) and high back contact barrier (Phi(b)) are partially responsible for the reduced V-oc and FF of cells with ultrathin CdS:O layers. The post annealing process can increase the carrier concentration (N-cv ) and V-bb and decrease the Phi(b), in which way improves V-oc and FF for higher cell efficiency.
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