Journal
SMALL
Volume 16, Issue 50, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/smll.202005439
Keywords
metal– insulator phase transition; oxygen vacancies; resistive memory; resistive switching; VO; (2) films; X‐ ray imaging
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Funding
- Quantum Materials for Energy Efficient Neuromorphic Computing (Q-MEEN-C) Energy Frontier Research Center (EFRC) - U.S. Department of Energy (DOE), Office of Science, Basic Energy Sciences [DE-SC0019273]
- Vannevar Bush Faculty Fellowship - Basic Research Office of the Assistant Secretary of Defense for Research and Engineering
- Office of Naval Research [N00014-15-1-2848]
- DOE Office of Science [DE-AC02-06CH11357]
- DOE, Office of Science, Office of Basic Energy Sciences [DE-SC0001805]
- Fundacion Ramon Areces
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Control of the metal-insulator phase transition is vital for emerging neuromorphic and memristive technologies. The ability to alter the electrically driven transition between volatile and non-volatile states is particularly important for quantum-materials-based emulation of neurons and synapses. The major challenge of this implementation is to understand and control the nanoscale mechanisms behind these two fundamental switching modalities. Here, in situ X-ray nanoimaging is used to follow the evolution of the nanostructure and disorder in the archetypal Mott insulator VO2 during an electrically driven transition. Our findings demonstrate selective and reversible stabilization of either the insulating or metallic phases achieved by manipulating the defect concentration. This mechanism enables us to alter the local switching response between volatile and persistent regimes and demonstrates a new possibility for nanoscale control of the resistive switching in Mott materials.
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