Related references
Note: Only part of the references are listed.Ammonia assisted low temperature growth of In2O3 (111) epitaxial films on c-sapphire substrates by chemical vapor deposition technique
Santosh Kumar Yadav et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2020)
Improvement in Light Output of Ultraviolet Light-Emitting Diodes with Patterned Double-Layer ITO by Laser Direct Writing
Jie Zhao et al.
NANOMATERIALS (2019)
Role of point defects in the electrical and optical properties of In2O3
Intuon Chatratin et al.
PHYSICAL REVIEW MATERIALS (2019)
Low Pressure Chemical Vapor Deposition Growth of Wide Bandgap Semiconductor In2O3 Films
Md Rezaul Karim et al.
CRYSTAL GROWTH & DESIGN (2018)
Highly ultraviolet transparent textured indium tin oxide thin films and the application in light emitting diodes
Zimin Chen et al.
APPLIED PHYSICS LETTERS (2017)
Indium oxide-a transparent, wide-band gap semiconductor for (opto)electronic applications
Oliver Bierwagen
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2015)
On the nature and temperature dependence of the fundamental band gap of In2O3
K. Irmscher et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2014)
Compensating vacancy defects in Sn- and Mg-doped In2O3
E. Korhonen et al.
PHYSICAL REVIEW B (2014)
Transport and angular resolved photoemission measurements of the electronic properties of In2O3 bulk single crystals
V. Scherer et al.
APPLIED PHYSICS LETTERS (2012)
Domain Matching Epitaxial Growth of In2O3 Thin Films on α-Al2O3(0001)
K. H. L. Zhang et al.
CRYSTAL GROWTH & DESIGN (2012)
Growth mechanism and electronic properties of epitaxial In2O3 films on sapphire
Ch Y. Wang et al.
JOURNAL OF APPLIED PHYSICS (2011)
Experimental electronic structure of In2O3 and Ga2O3
Christoph Janowitz et al.
NEW JOURNAL OF PHYSICS (2011)
Control of the band-gap states of metal oxides by the application of epitaxial strain: The case of indium oxide
Aron Walsh et al.
PHYSICAL REVIEW B (2011)
Determination of the Poisson ratio of (001) and (111) oriented thin films of In2O3 by synchrotron-based x-ray diffraction
K. H. L. Zhang et al.
PHYSICAL REVIEW B (2011)
High electron mobility In2O3(001) and (111) thin films with nondegenerate electron concentration
Oliver Bierwagen et al.
APPLIED PHYSICS LETTERS (2010)
Nanocomposite indium tin oxide thin films: formation induced by a large oxygen deficiency and properties
M. Nistor et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2010)
Undoped vacuum annealed In2O3 thin films as a transparent conducting oxide
A. Dixit et al.
APPLIED PHYSICS LETTERS (2009)
Surface Structure and Electronic Properties of In2O3(111) Single-Crystal Thin Films Grown on Y-Stabilized ZrO2(111)
K. H. L. Zhang et al.
CHEMISTRY OF MATERIALS (2009)
Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In2O3
P. D. C. King et al.
PHYSICAL REVIEW B (2009)
Investigation of the growth of In2O3 on Y-stabilized ZrO2(100) by oxygen plasma assisted molecular beam epitaxy
A. Bourlange et al.
THIN SOLID FILMS (2009)
Nature of the band gap of In2O3 revealed by first-principles calculations and x-ray spectroscopy
Aron Walsh et al.
PHYSICAL REVIEW LETTERS (2008)
High electron mobility of indium oxide grown on yttria-stabilized zirconia
T Koida et al.
JOURNAL OF APPLIED PHYSICS (2006)
The origin of n-type conductivity in undoped In2O3 -: art. no. 051911
T Tomita et al.
APPLIED PHYSICS LETTERS (2005)
Surface morphology and crystal quality of low resistive indium tin oxide grown on yittria-stabilized zirconia
H Ohta et al.
JOURNAL OF APPLIED PHYSICS (2002)