4.8 Article

Shallow and Deep States of Beryllium Acceptor in GaN: Why Photoluminescence Experiments Do Not Reveal Small Polarons for Defects in Semiconductors

Journal

PHYSICAL REVIEW LETTERS
Volume 126, Issue 2, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.126.027401

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Funding

  1. National Science Foundation [DMR-1904861]

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By using photoluminescence measurements and hybrid density functional theory, researchers have found a shallow effective mass state for the Be-Ga acceptor in GaN, with a level at 113 +/- 5 meV above the valence band. Calculations indicate that the BeGa acceptor has a bright shallow state responsible for the 3.38 eV PL band, as well as a dark, strongly localized small polaronic state with a lower hole capture efficiency.
Currently, only one shallow acceptor (Mg) has been discovered in GaN. Here, using photoluminescence (PL) measurements combined with hybrid density functional theory, we demonstrate that a shallow effective-mass state also exists for the Be-Ga acceptor. A PL band with a maximum at 3.38 eV reveals a shallow BeGa acceptor level at 113 +/- 5 meV above the valence band, which is the lowest value among any dopants in GaN reported to date. Calculations suggest that the BeGa is a dual-nature acceptor with the bright shallow state responsible for the 3.38 eV PL band, and the dark, strongly localized small polaronic state with a significantly lower hole capture efficiency.

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