Journal
PHYSICAL REVIEW LETTERS
Volume 125, Issue 25, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.125.256602
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Funding
- National Science Foundation [NSF-1914945, CNS-0958379, CNS-0855217, ACI-1126113]
- Research Corporation for Science Advancement through a FRED Award
- NSF CREST IDEALS [NSF-HRD-1547830]
- City University of New York High Performance Computing Center at the College of Staten Island
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While the study of space-charge potentials has a long history, present models are largely based on the notion of steady state equilibrium, ill-suited to describe wide band gap semiconductors with moderate to low concentrations of defects. Here we build on color centers in diamond both to locally inject carriers into the crystal and probe their evolution as they propagate in the presence of external and internal potentials. We witness the formation of metastable charge patterns whose shape-and concomitant field-can be engineered through the timing of carrier injection and applied voltages. With the help of previously crafted charge patterns, we unveil a rich interplay between local and extended sources of space-charge field, which we then exploit to show space-charge-induced carrier guiding.
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