4.8 Article

Optically Detected Magnetic Resonance in Neutral Silicon Vacancy Centers in Diamond via Bound Exciton States

Journal

PHYSICAL REVIEW LETTERS
Volume 125, Issue 23, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.125.237402

Keywords

-

Funding

  1. NSF under the EFRI ACQUIRE program [1640959]
  2. Princeton Center for Complex Materials, a Materials Research Science and Engineering Center [DMR-1420541]
  3. Air Force Office of Scientific Research [FA9550-17-0158]
  4. DARPA [D18AP00047]
  5. Janos Bolyai Research Scholarship of the Hungarian Academy of Sciences
  6. New National Excellence Program of the Ministry of Innovation and Technology in Hungary (ITM) from the National Research, Development and Innovation Office in Hungary (NKFIH) [UNKP-20-5]
  7. National Science Scholarship from A*STAR, Singapore
  8. NKFIH for Quantum Technology Program [2017-1.2.1-NKP-2017-00001]
  9. National Excellence Program [KKP129866]
  10. ITM
  11. NKFIH for the Quantum Information National Laboratory in Hungary
  12. EU Commission (Asteriqs project) [820394]
  13. EU QuantERA program (Q_magine project, NKFIH) [127889]
  14. Emerging Frontiers & Multidisciplinary Activities
  15. Directorate For Engineering [1640959] Funding Source: National Science Foundation

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Neutral silicon vacancy (SiV0) centers in diamond are promising candidates for quantum networks because of their excellent optical properties and long spin coherence times. However, spin-dependent fluorescence in such defects has been elusive due to poor understanding of the excited state fine structure and limited off-resonant spin polarization. Here we report the realization of optically detected magnetic resonance and coherent control of SiV0 centers at cryogenic temperatures, enabled by efficient optical spin polarization via previously unreported higher-lying excited states. We assign these states as bound exciton states using group theory and density functional theory. These bound exciton states enable new control schemes for SiV0 as well as other emerging defect systems.

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