4.4 Article

Photovoltaic Performance Enhancement of All-Inorganic CsPbBr3 Perovskite Solar Cells Using In2S3 as Electron Transport Layer via Facile Reflux-Condensation Process

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.202000665

Keywords

CsPbBr3; electron transport layers; indium sulfide; inorganic perovskite solar cells

Funding

  1. National Natural Science Foundation of China [51172031]
  2. Natural Science Foundation of Hunan Province [2020JJ4097]
  3. International Cooperation Scientific Research Project of Changsha University of Science and Technology [2018IC15]

Ask authors/readers for more resources

All-inorganic perovskite solar cells (PSCs) have gained significant attention for their excellent stability, with indium sulfide (In2S3) films as electron transport layers showing promise for enhancing power conversion efficiency. A wet chemistry method for preparing In2S3 films has been proposed, resulting in improved device performance.
All-inorganic perovskite solar cells (PSCs) have attracted tremendous attention over the past few years owing to their outstanding thermal and moiture stability. Electron transport layers (ETLs) in PSCs play a prominent role of electron extraction and transportation as well as hole blocking for a high power conversion efficiency (PCE). Indium sulfide (In2S3) films have been introduced as a promising ETL of PSCs recently due to their high carrier mobility, appropriate band gap, and controllable electrical characteristics. Herein, a facile wet chemistry method is proposed to prepare In2S3 films for the ETLs of all-inorganic CsPbBr3 PSCs with an architecture of fluorine-doped tin oxide/In2S3/CsPbBr3/carbon. The resultant compact In2S3 films show a certain visible light absorption with a bandgap of 2.51 eV. With the optimal 3000 rpm speed of In2S3 spin-coating, the best-performing In2S3 based device presents a higher champion PCE of 5.83% with open circuit voltage of 1.34 V, a short circuit current density of 6.74 mA cm(-2) and a fill factor of 0.65. The better performance of devices based on In2S3 ETLs is attributed to their more suitable energy level matching with less open circuit voltage loss, better light harvesting, and electron extraction capability enhancement.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.4
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available