Quantum efficiency improvement depending on the oxygen doping density, temperature, and layer thicknesses of an intermediate band solar cell based on ZnTe:O: Numerical analysis

Intermediate band solar cell based on ZnTe:O with an efficiency of 17.46 % has been optimized using solar cell capacitance simulator (SCAPS). The impacts of defect densities in the band gap of the absorber layer, layer thicknesses and temperature variation on the intermediate band solar cell (IBSC) output were widely simulated. Quantum efficiencies of the intermediate band solar cell were simulated at different temperatures above room temperature. The simulation results indicate that the quantum efficiencies of the ZnTe:O devices decrease with the increasing temperature above room temperature. An intermediate band solar based on ZnTe:O showed a significant spectral response of below band gap photons, and demonstrated an increase of more than 100 % in power conversion efficiency in comparison to the ZnTe solar cell without oxygen doping.