Transient behaviours of yellow and blue luminescence bands in unintentionally doped GaN

Yellow Luminescence (YL) band and blue luminescence (BL) band in a studied unintentionally doped GaN sample show a transient behaviour where the observed luminescence intensities change with the exposure time of the sample under 325 nm laser beam excitation at 10-300 K. Such an intensity variation is accompanied with a red-shift for YL peak at 10-140 K and one for BL peak at 140 K. We propose that such behaviours are related to the chemical transformations of YL-related C-N and CNON defects, and BL-related C-N-H-i and CNON-H-i defects during the exposure. (C) 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

Automated summary

In a studied unintentionally doped GaN sample, the yellow luminescence (YL) band and blue luminescence (BL) band exhibit a transient behavior between 10-300 K, with observed luminescence intensities changing with the exposure time, accompanied by a red-shift of YL peak at 10-140 K and for BL peak at 140 K. These behaviors are proposed to be related to the chemical transformations of YL-related C-N and CNON defects, and BL-related C-N-H-i and CNON-H-i defects during the exposure process.