Boron regulated dual emission in B, N doped graphene quantum dots

Graphene quantum dots are promising candidates for LED and solar cell studies with their low toxicity, inexpensive production cost and high luminescence capacity. However, controlling optical properties of graphene quantum dots is a challenge, which can be partially done by heteroatom doping. In this study, we synthesized dual emissive boron and nitrogen doped graphene quantum dots through a bottom-up synthesis method. Dual emission properties of boron and nitrogen doped quantum dots appeared in the presence of high amount of boron precursor in synthesis medium. Dual emissive features of quantum dots were controlled via controlling amount of boron content in quantum dot structure. Boron and nitrogen doped graphene quantum dots showed dual emissive properties at different excitation wavelengths, therefore they were suitable for applications concerning white - LED and solar cells. With their low toxicity, low production cost and controllable dual emission properties, dual emissive boron and nitrogen doped graphene quantum dots can be considered as a powerful alternative to cadmium and indium based quantum dots.

Automated summary

Graphene quantum dots are considered promising candidates for LED and solar cell studies due to their low toxicity, low production cost, and high luminescence capacity. However, controlling the optical properties of graphene quantum dots is a challenge that can be partially addressed through heteroatom doping. In this study, dual emissive boron and nitrogen doped graphene quantum dots were synthesized, showing potential for applications in white - LED and solar cells. The dual emission properties of the quantum dots were controlled by adjusting the amount of boron content in the structure.