4.5 Article

A comparative between CdS and CdSe quantum dots doped manganese for photovoltaic enhancement

Journal

OPTICAL AND QUANTUM ELECTRONICS
Volume 53, Issue 1, Pages -

Publisher

SPRINGER
DOI: 10.1007/s11082-020-02647-4

Keywords

Metals; Quantum dots; Mn2+ doping; QDSSCs

Funding

  1. Vietnam National Foundation for Science and Technology Development (NAFOSTED) [103.03-2016.94]

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In this study, photovoltaic devices based on CdS/CdSe multilayer photoanodes were fabricated with Mn2+ ions doped into CdS or CdSe quantum dots. The optimal performance was achieved with a 30% Mn2+ doping concentration and a thickness of CdSe:Mn2+ film at 3 cycles, resulting in an efficiency of 3.9%.
In this study, we report the fabrication of the photovoltaic devices based on CdS/CdSe multilayer photoanodes, in which Mn2+ ions were doped into CdS or CdSe quantum dots with the doping concentrations in the range of 5% to 40%. The optical, photovoltaic and electrochemical properties of the quantum dots sensitized Solar cells were found to be optimized for 30% Mn2+ doping concentration with the thickness of CdSe:Mn2+ film at 3 cycles, and the efficiency performance of 3.9%.

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