4.5 Article

Optical and electrical properties of biocompatible and novel (CS-GO) polymer nanocomposites

Journal

OPTICAL AND QUANTUM ELECTRONICS
Volume 53, Issue 1, Pages -

Publisher

SPRINGER
DOI: 10.1007/s11082-020-02723-9

Keywords

Chitosan; Graphene oxide; Optical band gap; Dielectric loss; Nanocomposites

Funding

  1. UGC-DAE Kolkata center [UGC-DAE-CSR-KC/CRS/19/RC14/0992/1027]

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This paper aims to provide information on the optical and electrical characteristics of CS-GO PNCs, and the variation of GO nano-filler has a direct impact on the properties of the nanocomposites. The optical band gap of the nanocomposite decreases with increasing wt% of GO, while electrical properties such as dielectric constant, dissipation factor, and electrical conductivity increase.
The objective of this paper is to give information about the optical and electrical characteristics measured of the CS-GO PNCs (chitosan-graphene oxide polymer nanocomposites), which is novel, biodegradable and biocompatible in nature. These nanocomposites have been synthesized by simple solution mixing technique trailed by ultrasonication treatment. The variation of GO nano-filler has shown a direct impact on the optical and electrical properties of the nanocomposite. According to the observations, optical absorption edge has a slightly shift towards the longer wavelength; while the optical band gap of the nanocomposite is constantly reduced on increasing the wt% of GO. In optical properties, the dielectric constant, dissipation factor and electrical conductivity have been found to increase with increasing wt% of GO in the PNC. Further, a shift in the relaxation frequency, at which dipole get relaxed indicating the interaction between the graphene and chitosan, has also been observed for different GO wt%. The conductivity of nanocomposites were increased to almost 10 times on increasing 2 wt% of GO. Taking into account the outcomes accomplished, the use of CS-GO PNC is reasonable for forthcoming advancement of optical sensors, and might be demonstrated as an expected possibility for the electrical or optoelectronic devices working at high frequencies.

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