Compliance current controlled volatile and nonvolatile memory in Ag/CoFe2O4/Pt resistive switching device

We report on the resistive memory effects of a Ag/CoFe2O4/Pt device and a deterministic conversion between volatile and nonvolatile resistive switching (RS) memory through the tuning of current compliance (I-CC). For the smaller I-CC (10(-4) A) the device exhibits volatile RS behavior with an atomically sized conducting filament showing the quantum conductance. For an intermediate I-CC (10(-2) A) nonvolatile bipolar RS behavior is observed, which could originate from the formation and rupture of filament consisting of Ag ions. The high resistance state (HRS) of the device shows a semiconducting conduction mechanism, whereas the low resistance state (LRS) was found to be Ohmic in nature. The temperature dependent resistance studies and magnetization studies indicated that the electrochemical metallization plays a dominant role in the resistive switching process for volatile and nonvolatile modes through the formation of Ag conducting filaments. For higher I-CC (10(-1) A) the device permanently switches to LRS. The irreversible RS memory behaviors, observed for higher I-CC, could be attributed to the formation of a thick and stable conducting channel formed of oxygen vacancies and Ag ions. The compliance current controlled resistive switching modes with a large memory window make the present device a potential candidate to pave the way for future resistive switching devices.

Automated summary

By adjusting the current compliance, the device exhibits volatile and nonvolatile resistive switching memories based on the type of conducting filament formed. The resistance states of the device depend on the current compliance set, with different characteristics observed for different levels of compliance.