Journal
NANOTECHNOLOGY
Volume 32, Issue 14, Pages -Publisher
IOP Publishing Ltd
DOI: 10.1088/1361-6528/abd438
Keywords
AlGaAs; InGaAs; AlGaAs quantum well; InGaAs active channel; interface states of InGaAs; Si delta-doped structure; negative photoconductivity; photoconductivity
Funding
- Ministry of Science and Technology of ROC [MOST 107-2622-M-033-001-CC2]
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The time dependent photoconductivity spectra along the active InGaAs QW channel in a dual and symmetric Si delta-doped AlGaAs/InGaAs/AlGaAs QW structure were systematically studied under various conditions. Both positive and negative photoconductivity were observed, with the latter attributed to two different origins at different temperature and photon energy ranges.
Si delta-doped AlGaAs/InGaAs/AlGaAs quantum well (QW) structure is commonly adopted as one of the core elements in modern electric and optoelectronic devices. Here, the time dependent photoconductivity spectra along the active InGaAs QW channel in a dual and symmetric Si delta-doped AlGaAs/InGaAs/AlGaAs QW structure are systematically studied under various temperatures (T = 80-300 K) and various incident photon energies (E-in = 1.10-1.88 eV) and intensities. In addition to positive photoconductivity, negative photoconductivity (NPC) was observed and attributed to two origins. For T = 180-240 K with E-in = 1.51-1.61 eV, the trapping of the photo-excited electrons by the interface states located inside the conduction band of InGaAs QW layer is one of the origins for NPC curves. For T = 80-120 K with E-in = 1.10-1.63 eV, the photoexcitation of the excess 'supersaturated' electrons within the active InGaAs QW caused by the short cooling process is another origin.
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