Journal
NANO LETTERS
Volume 20, Issue 12, Pages 8584-8591Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.0c03254
Keywords
graphene; centimeter-scale; insulating SiO2; intercalation; in situ device fabrication
Categories
Funding
- Ministry of Science and Technology [2016YFA0202300, 2018YFA0305800, 2019YFA0308500]
- National Natural Science Foundation of China [61888102, 51872284, 52072401, 51922011, 51991340]
- Strategic Priority Research Program of Chinese Academy of Sciences [XDB30000000, XDB28000000]
- Youth Innovation Promotion Association of CAS [2015005]
- Fundamental Research Funds for the Central Universities
- International Partnership Program of Chinese Academy of Sciences [112111KYSB20160061]
- K. C. Wong Education
- McMinn Endowment
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Graphene on SiO2 enables fabrication of Si-technology-compatible devices, but a transfer of these devices from other substrates and direct growth have severe limitations due to a relatively small grain size or device-contamination. Here, we show an efficient, transfer-free way to integrate centimeter-scale, single-crystal graphene, of a quality suitable for electronic devices, on an insulating SiO2 film. Starting with single-crystal graphene grown epitaxially on Ru(0001), a SiO2 film is grown under the graphene by stepwise intercalation of silicon and oxygen. Thin (similar to 1 nm) crystalline or thicker (similar to 2 nm) amorphous SiO2 has been produced. The insulating nature of the thick amorphous SiO2 is verified by transport measurements. The device-quality of the corresponding graphene was confirmed by the observation of Shubnikov-de Haas oscillations, an integer quantum Hall effect, and a weak antilocalization effect within in situ fabricated Hall bar devices. This work provides a reliable platform for applications of large-scale, high-quality graphene in electronics.
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