4.8 Article

Chiral Symmetry Breaking for Deterministic Switching of Perpendicular Magnetization by Spin-Orbit Torque

Journal

NANO LETTERS
Volume 21, Issue 1, Pages 515-521

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.0c03972

Keywords

chiral symmetry breaking; Dzyaloshinskii-Moriya interaction; spin-orbit torque; magnetic gradient

Funding

  1. NSF [1935362, 1909416, 1619027]
  2. Nanosystems Engineering Research Center for Translational Applications of Nanoscale Multiferroic Systems (TANMS)
  3. U.S. Army Research Office MURI program [W911NF-16-1-0472]
  4. Spins and Heat in Nanoscale Electronic Systems (SHINES) Center - US Department of Energy (DOE) [DE-SC0012670]
  5. NSF MRSEC [DMR-1720595]
  6. Directorate For Engineering [1935362] Funding Source: National Science Foundation
  7. Div Of Electrical, Commun & Cyber Sys [1935362] Funding Source: National Science Foundation

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The study demonstrates that breaking chiral symmetry with anti-symmetric DMI can induce deterministic SOT switching. By introducing gradients of saturation magnetization or magnetic anisotropy, non-collinear dynamic spin textures are formed, breaking their chiral symmetry and enabling deterministic magnetization switching.
Symmetry breaking is a characteristic to determine which branch of a bifurcation system follows upon crossing a critical point. Specifically, in spin-orbit torque (SOT) devices, a fundamental question arises: how can the symmetry of the perpendicular magnetic moment be broken by the in-plane spin polarization? Here, we show that the chiral symmetry breaking by the anti-symmetric Dzyaloshinskii-Moriya interaction (DMI) can induce the deterministic SOT switching of the perpendicular magnetization. By introducing a gradient of saturation magnetization or magnetic anisotropy, the dynamic noncollinear spin textures are formed under the current-driven SOT, and thus, the chiral symmetry of these dynamic spin textures is broken by the DMI, resulting in the deterministic magnetization switching. We introduce a strategy to induce an out-of-plane (z) gradient of magnetic properties as a practical solution for the wafer-scale manufacture of SOT devices.

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