Journal
MATERIALS TECHNOLOGY
Volume 37, Issue 6, Pages 381-396Publisher
TAYLOR & FRANCIS LTD
DOI: 10.1080/10667857.2020.1854516
Keywords
CuO; Sno(2); F; ZnO; Sn; spray pyrolysis; thin film; substrate; photocell
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This paper compares the growth and optoelectronic properties of CuO materials synthesized on different substrates. X-ray diffraction analysis reveals the formation of CuO nanoparticles in a pure monoclinic structure, with decreasing crystallite size as the substrate changes. This size reduction is attributed to the enlargement of the energy band gap due to the quantum confinement effect. The electrical characteristics show that CuO/SnO2:F/glass thin films have the best parameters, making them suitable as absorber materials in photovoltaic devices.
In this paper to compare the growth and optoelectronic properties of copper oxide (CuO) materials suitable for advanced application, CuO layers were synthesized on glass and SnO2:F). The X-ray diffraction analysis showed that CuO nanoparticles were formed in pure monoclinic structure where crystallite size decreases from 37.39 to 33.44 nm when the substrate changed, respectively, from glass to SnO2:F/glass. This crystallite size reduction was related to the energy band gap (Eg) enlargement from 1.455 to 1.525 eV due to the quantum confinement effect. Eg values were almost equal to the theoretical one for converting solar energy into electrical energy and CuO may be used as an absorber material in photovoltaic devices. Electrical characteristics were studied using the impedance spectroscopy technique at room temperature and confirmed by the Hall Effect measurements. CuO/SnO2:F/glass thin films have best electrical parameters and consequently the Ag/ZnO:Sn(n)/CuO(p)/SnO2:F photocell was elaborated and its J-V characteristics were analyzed.
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