Recent development on BN-based photocatalysis: A review

As a variety of graphene analogue, boron nitride (BN) semiconductor has attracted widespread attention due to its unique physiochemical properties. Among various applications of BN, photocatalysis has become a focus of research. In essence, BN contains a wide band gap (similar to 5.5 eV), which makes it extremely challenging to achieve direct activation by light photons. Instead, BN could serve as a co-catalyst, as it has the capability to promote the photocatalytic activity of the support. In general, the low quantum yield caused by the high recombination rate of photogenerated charge carriers presents a tough challenge to the commercialization of photocatalysis. BN-enhanced photocatalysis provides a flexible solution to the above-mentioned problem. Moreover, there have been a variety of different BN-based composites reported and applied in photocatalysis, which is part of the review conducted in this paper. In addition, the properties of BN, the approaches to experimental preparation of BN as well as the recommendation for future work are also indicated and discussed.