Journal
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Volume 121, Issue -, Pages -Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2020.105430
Keywords
Ga2O3; Thin film; Spin-on-glass; Metal-oxide semiconductor field-effect transistors; Solar-blind photodetectors; Sputtering
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Funding
- National Research Foundation of Korea (NRF) through the Basic Science Research Program [2017R1A2B4012278]
- Center for Advanced Soft-Electronics - Ministry of Science, ICT and Future Planning through the Global Frontier Project [CASE-2011-0031638]
- National Research Foundation of Korea [2011-0031638, 2017R1A2B4012278] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Polycrystalline n-type beta-Ga2O3 thin films with a thickness of 100 nm were successfully fabricated using sputtering and spin-on-glass Sn-doping techniques. These thin films were utilized as an active layer for power electronics and ultraviolet optoelectronics, showing high breakdown voltages and suitability for solar-blind photodetectors.
Polycrystalline n-type beta-Ga2O3 thin films with a thickness of 100 nm are demonstrated via the sputtering process followed by the spin-on-glass Sn-doping technique. The thin films are used as an active layer for power electronics and ultraviolet optoelectronics. In the present study, they are implemented in back-gated metal-oxide semiconductor field-effect transistors with a 300-nm thick SiO2 gate dielectric. The fabricated device shows typical power electronic properties with high breakdown voltages (as high as 216 V). The device also shows a clear photoresponse to the 254-nm light illuminations, indicating that the polycrystalline beta-Ga2O3 thin film is also suitable for solar-blind photodetectors.
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