Journal
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Volume 121, Issue -, Pages -Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2020.105297
Keywords
IGZO; Electronic properties; Optical properties; First-principles
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Funding
- Research Council of Norway (ToppForsk project) [251131]
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In this study, the fundamental properties of crystalline InGaZnO4 were analyzed, identifying the most stable Ga/Zn atomic distribution patterns and revealing its characteristics as an indirect band-gap semiconductor. The material exhibits good electron mobility and suppressed hole mobility, resulting in lower power consumption in future InGaZnO4-based transistors.
Indium gallium zinc oxides (IGZO) have been developed for thin-film transistor technologies. In this work, we analyze the fundamental properties of crystalline InGaZnO4, considering all possible Ga/Zn atomic distribution patterns. Using the hybrid Hartree-Fock density functional approach, the most stable configurations are identified. The simulations reveal that the considered configurations are indirect band-gap semiconductors with highly dispersive conduction bands (CB) and very flat valence bands (VB). Thereby, the electron effective masses are light, contrary to the heavy hole effective masses. This implies a good electron mobility and suppressed hole mobility, and consequently a low off-state current that minimizes the power consumption in future InGaZnO4-based transistors. Coexistence of different configurations is not an issue for InGaZnO4 since they all present very similar optoelectronic properties.
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