Journal
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Volume 121, Issue -, Pages -Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2020.105349
Keywords
Indium sulfofluoride; Thin-films; Amorphous semiconductors; Optical properties; Photoconductivity; Photovoltaics
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Funding
- EU funds through the FEDER European Regional Development Fund
- Fundacao para a Ciencia e a Tecnologia [PTDC/NAN-OPT/31311/2017, UID/CTM/04540/2019]
- pluriannual contract
- CeFEMA [UID/CTM/04540/2019]
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This study focuses on the preparation and characterization of undoped and Sn-doped indium sulfofluoride thin films by radio-frequency plasma-enhanced reactive thermal evaporation. The undoped material exhibits a wide range of resistivity depending on deposition conditions, while Sn doping significantly decreases the resistance. Additionally, the synthesized films are highly transparent and exhibit high photosensitivity in the blue-UV region.
This work reports on undoped and Sn-doped indium sulfofluoride thin-films deposited by radio-frequency plasma-enhanced reactive thermal evaporation. The deposition was performed evaporating pure indium or indium-tin alloy in SF6 plasma at substrate temperatures ranging from 373 to 423 K. Rutherford backscattering analysis and secondary-ion mass spectrometry were used to determine the chemical composition of the films. The film characterization includes electrical, optical, and photoconductivity measurements. The resistivity of undoped material varies in a wide range of 1 G Omega-cm to 2 T Omega-cm depending on deposition conditions. Sn doping leads to a decrease in the resistance down to 8 M Omega-cm. The films are highly transparent in the visible-infrared region due to an indirect bandgap of 2.7-3 eV. Moreover, the doped material is highly photosensitive in the blue -UV region. Photoconductivity kinetics under various excitation conditions was also studied. The synthesized material is a promising candidate for a buffer layer in chalcogenide-based solar cells.
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