Journal
MACROMOLECULAR RESEARCH
Volume 28, Issue SUPPL 1, Pages 1248-1252Publisher
POLYMER SOC KOREA
DOI: 10.1007/s13233-020-8161-6
Keywords
organic field-effect transistors; polyurethane; polymer dielectric blend; ambipolar polymer semiconductor; PMMA
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Funding
- National Research Foundation of Korea (NRF) - Korea government (Ministry of Science and ICT, MSIT) [NRF-2020R1G1A1011577, 2013M3A6A5073183, 2014M3A6A5060932]
- National Research Foundation of Korea [2014M3A6A5060932] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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We report improved electron transport in solution-processed ambipolar organic field-effect transistors (OFETs) employing polymer dielectric blends of low-k poly(methyl methacrylate) (PMMA) and polyurethane (PU) elastomer. Ambipolar poly(9,9-dioctylfluorene-alt-benzothiadiazole) (F8BT) OFETs typically showed an unbalanced hole and electron mobilities of 8.7 +/- 0.4 x 10(-4) and 2.0 +/- 0.1 x 10(-4)cm(2)V(-1)s(-1) respectively, using neat PMMA gate dielectric. By controlling the blending ratio of PU (0 similar to 50 v%) in the PMMA-PU blend dielectrics, we tuned the charge carrier transport in the F8BT OFETs. The electron mobility gradually increases significantly, resulting in nearly perfect ambipolar characteristics with hole and electron mobilities of 6.0 +/- 0.7 x 10(-4) and 9.7 +/- 0.4 x 10(-4) cm(2)V(-1)s(-1) respectively in PMMA: PU blend of 50:50 v%. The remarkable trend ensues from trapping of hole carriers at the dielectric/semiconductor by the -N-H- and carbonyl group (C=O) interface dipoles in the PU dielectric. The PMMA-PU blend dielectrics demonstrate excellent potentials for high-performance ambipolar OFETs, inverters, and complementary circuits.
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