The effect of nano-twins on the thermoelectric properties of Ga2O3(ZnO)m (m=9, 11, 13 and 15) homologous compounds

Ga2O3(ZnO)(m) (m = integer) homologous compounds are naturally occurring nanostructured materials. Their intrinsically low thermal conductivity makes them attractive for thermoelectric applications. High density Ga2O3(ZnO)(m) (m = 9, 11, 13, and 15) single phase ceramics were prepared by solid-state reaction. Nano-sized, twin-like V-shaped boundaries parallel to b-axis (apex angle similar to 60 degrees) were observed for all compositions. Atomic resolution Z-contrast imaging and EDS analysis for m = 15 showed segregation of Ga ions at the interface of Vshaped twin boundaries. Thermal and charge transport properties depend on the value of m. Compositions with m = 9 exhibited very low lattice thermal conductivity of 2 to 1.5 W/m.K at 300 K-900 K; compositions with m=15 showed improved power factor of 140 mu W/m. K-2 at 900 K leading to a thermoelectric figure of merit (ZT value) of 0.055. This study explores the structural variants and routes to improve the thermoelectric properties of these materials