4.8 Article

Highly Luminescent CsPbBr3@Cs4PbBr6 Nanocrystals and Their Application in Electroluminescent Emitters

Journal

JOURNAL OF PHYSICAL CHEMISTRY LETTERS
Volume 11, Issue 23, Pages 10196-10202

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acs.jpclett.0c03142

Keywords

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Funding

  1. Advanced Research Center of Green Materials Science and Technology from The Featured Area Research Center Program within Ministry of Education [107L9006]
  2. Ministry of Science and Technology in Taiwan [MOST 109-2113-M-002020-MY3, MOST 107-2113-M-002-008-MY3, MOST 1073017-F-002-001]
  3. JST-CREST, Japan [JPMJCR16N3]
  4. International Collaborative Research Program of the Institute for Chemical Research, Kyoto University [2020-35]

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Zero-dimensional perovskite nanocrystals (NCs) are becoming the most attractive material due to their excellent optical performance and better stability compared with high-dimensional perovskite. However, their application in electroluminescent (EL) emitters for high-quality displays is still limited. In this work, we successfully achieved CsPbBr3@Cs4PbBr6 NCs around 13.9 +/- 0.2 nm by using the hot-injection method. Additional SnBr2 was mixed in the PbBr2 precursor to provide extra Br- ions and reduce the excessive amount of Pb2+ ions to promote the formation of CsPbBr3@Cs4PbBr6. Time resolution photoluminescence analysis indicated that the green emission of our CsPbBr3@Cs4PbBr6NCs originated from the embedded CsPbBr3NCs, which corresponds to our previous research. The Cs4PbBr6 crystals passivated the surface of CsPbBr3NCs, resulting in the absence of trions for the high photoluminescence quantum yield. The as-synthesized CsPbBr3@Cs4PbBr6NCs were used to fabricate quantum dot light-emitting diode (QLED) devices with the highest current efficiency of 4.89 cd/A. This is the best performance of the CsPbBr3@Cs4PbBr6-system QLED device, which reveals the great potential of CsPbBr3@Cs4PbBr6 NCs and will inspire further study of zero-dimensional perovskite composite NCs for EL emitters.

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