Nonvolatile Controlling Valleytronics by Ferroelectricity in 2H-VSe2/Sc2CO2 van der Waals Heterostructure

Controlling two-dimensional (2D) valleytronics by external means is a major challenge to better information technology. Here, we demonstrate that introducing a ferroelectric-aided layer is an extraordinary approach for realizing the nonvolatile control of 2D valleytronics. When stacking valleytronic monolayer 2H-VSe2 with ferroelectric monolayer Sc2CO2 and the ferroelectric polarization pointing along the -z direction, the system exhibits a ferromagnetic semiconducting nature and harbors rare intrinsic valley polarization, and its spontaneous valley polarization reaches 234 meV. Upon reversing its ferroelectric polarization via a short-term voltage, the ferromagnetism is preserved, but a semiconductor-to-half-metal transition occurs, erasing any possibility for valleytronics. This allows the electrical reversible control of valleytronics in a 2H-VSe2/Sc2CO2 van der Waals heterostructure through the application of a short-term voltage. Our work thus provides a promising strategy for achieving nonvolatile control of valleytronics at the nanoscale and helps the design of novel controllable devices.

Automated summary

The study demonstrates the nonvolatile control of 2D valleytronics by introducing a ferroelectric-aided layer, achieving electrical reversible control of valleytronics in a 2H-VSe2/Sc2CO2 van der Waals heterostructure through the application of a short-term voltage. This provides a promising strategy for achieving nonvolatile control of valleytronics at the nanoscale and helps design novel controllable devices.