Deposition of grid-like single-crystal Ce2O3 thin films on LaAlO3(100) substrate by pulsed laser deposition

Oxygen-deficient Ce2O3 growth requires reduction of CeO2 with hydrogen gas and high temperatures. In this study, a 2-year desiccated target with different oxygen-deficient phases was used as a pellet in order to deposit cerium oxide thin films on LaAlO3 substrates from 100 to 800 degrees C by pulsed laser deposition. Desiccated target utilization resulted in pure Ce2O3 and CeO2-Ce2O3 mixture thin films verified by X-ray diffraction. Morphology of the thin films was investigated by scanning electron microscope, and seen that Ce2O3 films have grid-like surface formation. A fresh target is prepared and used in order to compare the crystal structure of the desiccated target. Experiments repeated with a fresh target and X-ray photoelectron spectroscopy of cerium oxide films indicated that Ce2O3 growth depends on target stoichiometry. Further desiccation of the target resulted in single-crystal Ce2O3 growth in all temperatures between 100 and 800 degrees C, attributed to stoichiometric transfer of the target composition.

Automated summary

The growth of oxygen-deficient Ce2O3 requires reduction of CeO2 with hydrogen gas at high temperatures. The use of a desiccated target results in the deposition of pure Ce2O3 and CeO2-Ce2O3 mixture thin films. The morphology of the thin films, characterized by grid-like surface formation in Ce2O3 films, was investigated by scanning electron microscopy. Further desiccation of the target resulted in single-crystal Ce2O3 growth, attributed to stoichiometric transfer of the target composition.