Novel rare earth yttrium doping effect on physical properties of PbS nanostructures: facile synthesis and characterization

The dielectric properties of pure and yttrium-doped PbS nanoparticles synthesized by the coprecipitation chemical synthesis route have been studied by several characterizations. X-ray diffraction patterns of samples were employed to estimate the crystallite sizes and intrinsic microstrains using Williamson-Hall (W-H) plot analysis. The crystallite size and intrinsic macrostrain values were evaluated in the range of 13.7-15.9 nm and 1.09 x 10(-3)-1.72 x 10(-3), respectively, using W-H plots. The formation of nanoparticles, nanoflakes, sponge, and nanosheets were seen via scanning electron microscope (SEM). Energy dispersive spectroscopy (EDS) of 5.0 wt% confirms the Y: PbS sample elements' chemical composition and stoichiometry. The optical band gaps increase in the range of (0.93-1.17 eV) with an increase in the dislocation density. The higher values of dielectric constant (23.6-28.0), dielectric loss (37.6-176.8), loss tangent (2.7-8.6), and electrical conductivity [10.2 to (11.7) S/m] have been reported at the lower frequency. The highest electrical conductivity values were obtained in the range of [4.71 to (4.81) S/m] for as-prepared samples. The greater capacitance and impedance values were found at 3 kHz and decrease with increasing the frequency up to 10 MHz. The current-voltage characteristic curves of undoped and Y: PbS NPs were performed under biased voltage. The space charge current density was noticed in the range of (8.7 x 10(-4)-4.2 x 10(-4) amp/cm(2)) at 1.0, 2.5, and 5.0 wt% of Y: PbS samples. The enhancement in the optical band gap and dielectric and electric properties on yttrium doping in PbS compared to pristine PbS NPs makes them suitable for optoelectronic applications.

Automated summary

The dielectric properties of pure and yttrium-doped PbS nanoparticles were studied using various characterizations. Yttrium doping in PbS resulted in enhanced optical band gap, dielectric, and electrical properties, making them suitable for optoelectronic applications.