Collective spin behavior of NiGe thin films on MgO substrate

The results of the magnetic and structural properties of epitaxially grown NiGe thin films on (001) oriented MgO substrate by using molecular beam epitaxy (MBE) have been presented. The XRD measurements showed that the NiGe thin films grown on MgO substrate epitaxially with four-fould rotational crystalline symmetry. In addition, the measurements indicate that the NiGe films were grown on (110)-crystalliographic orientation with respect to (100) direction of the MgO substrate. It has been revealed that the saturation magnetization (M-s) decreases with increasing Ge concentration up to the critical value and then start to increases again at the rate of x = 0.14 in sample of Ni(1-x)Gex. With increasing of the relative Ge concentration, the structural and the magnetic properties of the films evolved into a new pahase with a critical structural order parameter. Also, ferromagnetic resonance measurements show that all magneto-crystalline anisotropy parameters are consistent with this structural critical order. We compared these results with our previous studies about the structural and magnetic properties of the NiGe thin films grown on native oxide Si (001) substrate.

Automated summary

Epitaxially grown NiGe thin films on (001) oriented MgO substrate using MBE exhibited four-fold rotational crystalline symmetry and grew on (110)-crystalliographic orientation with respect to the substrate. The saturation magnetization decreased with increasing Ge concentration up to a critical value before starting to increase again. As the relative Ge concentration increased, the structural and magnetic properties evolved into a new phase with a critical structural order parameter. Ferromagnetic resonance measurements showed consistent magneto-crystalline anisotropy parameters with this critical order. Comparisons were made with previous studies on NiGe thin films grown on native oxide Si (001) substrate.