Journal
JOURNAL OF LUMINESCENCE
Volume 233, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.jlumin.2021.117928
Keywords
beta-Ga2O3; Films pressure; MOCVD; Sapphire
Categories
Funding
- National key Research and Development Program of China [2018YFB040650]
- Fundamental Research Funds for the Central Universities [JB181108]
- National Natural Science Foundation of China [61774116, 61904139, 61974112, 61974115]
- Natural Science Basic Research Program of Shaanxi [2020JQ-315]
- Key Research and Development program in Shaanxi Province [2018ZDCXL-GY-0l-02-02]
- Natural Science Foundation of Shaanxi Province of China [2019JM-366]
- 111 Project [B12026]
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In this study, beta-Ga2O3 films were deposited on off-angled substrates by low pressure MOCVD, showing that the grain size and growth rate of the film decrease with increasing growth pressure, leading to weakening of photoluminescence intensity.
beta-Ga2O3 films were deposited on 6 degrees off-angled (toward < 11-20 > direction) sapphire (0001) substrates by low pressure MOCVD. beta-Ga2O3 films followed step-flow growth mode at the lower growth pressure, and grains size and growth rate of the film decreased with the increasing growth pressure. The decrease of Ga and O vacancies induced the weakness of the blue and green photoluminescence intensity, while N component enchanced the red photoluminescence intensity. Optical bandgaps of the beta-Ga2O3 films grown at 20, 30 and 40 Torr were 4.61, 4.64 and 4.65 eV, respectively.
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