Direct formation of graphene layers on diamond by high-temperature annealing with a Cu catalyst

The formation of high-quality graphene layers on diamond was achieved based on a high-temperature annealing method using a Cu catalyst. Typical features of monolayer graphene were observed in the Raman spectra of layers formed by annealing of Cu/diamond heterostructures at 950 degrees C for 90 min. The coverage ratio of these graphene layers on diamond was estimated to be on the order of 85% by Raman mapping of the 2D peak. The sheet hole concentration and mobility values of the layers were estimated to be similar to 10(13)cm(-2) and similar to 670 cm(2)/Vs, respectively. These values are comparable to those previously observed for high-quality graphene layers on SiC. (C) 2015 Elsevier B.V. All rights reserved.