Growth Parameter Based Control of Cation Disorder in MgSnN2 Thin Films

MgSnN2 thin films have been grown on yttria-stabilized zirconia substrates via plasma-assisted molecular beam epitaxy and analyzed using reflection high-energy electron diffraction, X-ray diffraction, optical transmission, and cathodoluminescence. By systematically varying the growth parameters, particularly the substrate temperature, Mg:Sn flux ratio, substrate, and nitrogen flow rate, we were able to achieve high quality films and control disorder in the cation sublattice. This control of disorder allows for the ability to adjust the band gap continuously over a wide range of values.

Automated summary

The research successfully grew high-quality MgSnN2 thin films on yttria-stabilized zirconia substrates by adjusting the growth parameters, and controlled disorder in the cation sublattice, enabling continuous tuning of the band gap values.