Journal
DIAMOND AND RELATED MATERIALS
Volume 63, Issue -, Pages 86-90Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.diamond.2015.10.003
Keywords
Mosaic single-crystal-diamond; Chemical etching; KCl; KOH; Surface damage; Removal rate
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Funding
- Grants-in-Aid for Scientific Research [26420071] Funding Source: KAKEN
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To fast remove the surface damage layer from single-crystal-diamond, we have developed a chemical etching process using molten KCl and KOH solution at high temperature around 1100 degrees C. High removal rate about R-{001} = 2.0 mu m/h, R-{101} = 20 mu m/h and R-{111} = 26 mu m/h was achieved for the {001} sample surfaces, {101} and 011 sample edges, respectively. Laser microscope observation has confirmed that the {001} surface flatness has been greatly improved after etching and surface roughness formed during previous lift-off process has been effectively removed. (C) 2015 Elsevier B.V. All rights reserved.
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