Related references
Note: Only part of the references are listed.Diffusion-driven GaInP/GaAs light-emitting diodes enhanced by modulation doping
Antti Myllynen et al.
OPTICAL AND QUANTUM ELECTRONICS (2019)
Effective optimization of surface passivation on porous silicon carbide using atomic layer deposited Al2O3
Weifang Lu et al.
RSC ADVANCES (2017)
White Light Emission from Fluorescent SiC with Porous Surface
Weifang Lu et al.
SCIENTIFIC REPORTS (2017)
Diffusion-Driven Charge Transport in Light Emitting Devices
Iurii Kim et al.
MATERIALS (2017)
Experimental evidence for mobile luminescence center mobility on partial dislocations in 4H-SiC using hyperspectral electroluminescence imaging
Joshua D. Caldwell et al.
APPLIED PHYSICS LETTERS (2013)
Stable field emission from nanoporous silicon carbide
Myung-Gyu Kang et al.
NANOTECHNOLOGY (2013)
Silicon carbide light-emitting diode as a prospective room temperature source for single photons
F. Fuchs et al.
SCIENTIFIC REPORTS (2013)
Considerably long carrier lifetimes in high-quality 3C-SiC(111)
J. W. Sun et al.
APPLIED PHYSICS LETTERS (2012)
Light-Emitting Two-Dimensional Ultrathin Silicon Carbide
S. S. Lin
JOURNAL OF PHYSICAL CHEMISTRY C (2012)
Evaluation of long carrier lifetimes in thick 4H silicon carbide epitaxial layers
Tetsuya Miyazawa et al.
APPLIED PHYSICS LETTERS (2010)
Impacts of recombination at the surface and in the substrate on carrier lifetimes of n-type 4H-SiC epilayers
Tsunenobu Kimoto et al.
JOURNAL OF APPLIED PHYSICS (2010)
Triple Shockley type stacking faults in 4H-SiC epilayers
Gan Feng et al.
APPLIED PHYSICS LETTERS (2009)
The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes
Di Zhu et al.
APPLIED PHYSICS LETTERS (2009)
Comparative columnar porous etching studies on n-type 6H SiC crystalline faces
Y. Ke et al.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2008)
On the electron affinity of silicon carbide polytypes
S. Yu. Davydov
SEMICONDUCTORS (2007)
Electron-excited luminescence of SiC surfaces and interfaces
LJ Brillson et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2004)
Experimental analysis and theoretical model for anomalously high ideality factors (n>>2.0) in AlGaN/GaN p-n junction diodes
JM Shah et al.
JOURNAL OF APPLIED PHYSICS (2003)
Luminescence from stacking faults in 4H SiC
SG Sridhara et al.
APPLIED PHYSICS LETTERS (2001)
Share Paper
