Related references
Note: Only part of the references are listed.Photoluminescence spectroscopy of metamorphic InAsSb on GaAs and Si
Z. Taghipour et al.
JOURNAL OF LUMINESCENCE (2020)
Temperature-Dependent Minority-Carrier Mobility in p-Type InAs/GaSb Type-II-Superlattice Photodetectors
Z. Taghipour et al.
PHYSICAL REVIEW APPLIED (2019)
Temperature-dependent minority carrier lifetime in InAsSb nBn detectors on alternative substrates
Z. Taghipour et al.
INFRARED SENSORS, DEVICES, AND APPLICATIONS IX (2019)
Direct MBE growth of metamorphic nBn infrared photodetectors on 150mm Ge-Si substrates for heterogeneous integration
Joel M. Fastenau et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2019)
Temperature-dependent optical measurements of the dominant recombination mechanisms in InAs/InAsSb type-2 superlattices
Y. Aytac et al.
JOURNAL OF APPLIED PHYSICS (2015)
Intensity- and Temperature-Dependent Carrier Recombination in InAs/InAs1-xSbx Type-II Superlattices
B. V. Olson et al.
PHYSICAL REVIEW APPLIED (2015)
MBE growth of GaSb-based photodetectors on 6-inch diameter GaAs substrates via select buffers
Joel M. Fastenau et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2013)
Performance Comparison of Long-Wavelength Infrared Type II Superlattice Devices with HgCdTe
David R. Rhiger
JOURNAL OF ELECTRONIC MATERIALS (2011)
Crack formation in GaAs heteroepitaxial films on Si and SiGe virtual substrates
VK Yang et al.
JOURNAL OF APPLIED PHYSICS (2003)
Auger recombination in narrow-gap semiconductor superlattices incorporating antimony
CH Grein et al.
JOURNAL OF APPLIED PHYSICS (2002)
Share Paper
