Journal
JOURNAL OF APPLIED PHYSICS
Volume 129, Issue 4, Pages -Publisher
AIP Publishing
DOI: 10.1063/5.0035909
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Funding
- National Natural Science Foundation of China (NNSFC) [11874221, 11574045, 11704190]
- Natural Science Foundation of Jiangsu Province [BK2017103]
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The influence of spin-valley polarized transport channel (SVPTC) mismatch in a silicene-based ferromagnet/ferromagnet/superconductor junction and the barrier strength in a ferromagnet/insulator/ferromagnet/superconductor junction were investigated. It was found that the mismatch in SVPTC can be modulated by electric and exchange fields, while the phase shift of conductance oscillation is created by changing the electric field in the former structure and by altering the barrier strength in the latter structure.
We investigate the influence of spin-valley polarized transport channel (SVPTC) mismatch modulated by the perpendicular electric field and the exchange field in a silicene-based ferromagnet/ferromagnet/superconductor junction and the barrier strength in a ferromagnet/insulator/ferromagnet/superconductor junction. In the former junction, due to the mismatch of SVPTC caused by the different electric fields applied in the two ferromagnet (F) layers, the zero-bias Andreev reflection and zero-bias conductance peak (ZBCP) are suppressed. Moreover, by shifting the band, the exchange field can lead to the different mismatch of SVPTC between the two F layers with opposite magnetization orientations, and thus, the conversion from ZBCP to a zero-bias conductance valley can be observed. For the latter junction, due to the electrically tunable SVPTC, the phase shift of conductance oscillation with barrier strength is created by changing the electric field but not by altering the exchange field. Particularly, for the variation from the parallel to the antiparallel magnetic configuration, there is a phase shift pi / 2 of conductance vs the barrier strength.
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