Related references
Note: Only part of the references are listed.Classification with a disordered dopantatom network in silicon
Tao Chen et al.
NATURE (2020)
A silicon quantum-dot-coupled nuclear spin qubit
Bas Hensen et al.
NATURE NANOTECHNOLOGY (2020)
Universal quantum logic in hot silicon qubits
L. Petit et al.
NATURE (2020)
Exploring conductivity in ex-situ doped Si thin films as thickness approaches 5nm
John MacHale et al.
JOURNAL OF APPLIED PHYSICS (2019)
A two-qubit gate between phosphorus donor electrons in silicon
Y. He et al.
NATURE (2019)
Graphene and two-dimensional materials for silicon technology
Deji Akinwande et al.
NATURE (2019)
Preferential Positioning, Stability, and Segregation of Dopants in Hexagonal Si Nanowires
Michele Amato et al.
NANO LETTERS (2019)
Five nanometre CMOS technology
Toshiro Hiramoto
NATURE ELECTRONICS (2019)
Metal-semimetal Schottky diode relying on quantum confinement
Farzan Gity et al.
MICROELECTRONIC ENGINEERING (2018)
Electronic band structures of undoped and P-doped Si nanocrystals embedded in SiO2
E. Arduca et al.
JOURNAL OF MATERIALS CHEMISTRY C (2018)
All-Electrical Control of a Hybrid Electron Spin/Valley Quantum Bit in SOI CMOS Technology
Leo Bourdet et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2018)
Electronic and structural properties of rhombohedral [111] and [110] oriented ultra-thin bismuth nanowires
Lida Ansari et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2017)
Defect-Induced Luminescence Quenching vs. Charge Carrier Generation of Phosphorus Incorporated in Silicon Nanocrystals as Function of Size
Daniel Hiller et al.
SCIENTIFIC REPORTS (2017)
Reinventing solid state electronics: Harnessing quantum confinement in bismuth thin films
Farzan Gity et al.
APPLIED PHYSICS LETTERS (2017)
Thermodynamic stability of high phosphorus concentration in silicon nanostructures
Michele Perego et al.
NANOSCALE (2015)
Location and Electronic Nature of Phosphorus in the Si Nanocrystal - SiO2 System
Dirk Koenig et al.
SCIENTIFIC REPORTS (2015)
25th Anniversary Article: Semiconductor Nanowires Synthesis, Characterization, and Applications
Neil P. Dasgupta et al.
ADVANCED MATERIALS (2014)
Strain induced effects on electronic structure of semi-metallic and semiconducting tin nanowires
Lida Ansari et al.
APPLIED PHYSICS LETTERS (2014)
Preferential Positioning of Dopants and Co-Dopants in Embedded and Freestanding Si Nanocrystals
Roberto Guerra et al.
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY (2014)
Doping Si nanocrystals embedded in SiO2 with P in the framework of density functional theory
Zhenyi Ni et al.
PHYSICAL REVIEW B (2014)
Energy Offset Between Silicon Quantum Structures: Interface Impact of Embedding Dielectrics as Doping Alternative
Dirk Koenig et al.
ADVANCED MATERIALS INTERFACES (2014)
Scaling size of the interplay between quantum confinement and surface related effects in nanostructured silicon
G. Seguini et al.
APPLIED PHYSICS LETTERS (2013)
First Principle-Based Analysis of Single-Walled Carbon Nanotube and Silicon Nanowire Junctionless Transistors
Lida Ansari et al.
IEEE TRANSACTIONS ON NANOTECHNOLOGY (2013)
Fabrication and Demonstration of 3-nm-Channel-Length Junctionless Field-Effect Transistors on Silicon-on-Insulator Substrates Using Anisotropic Wet Etching and Lateral Diffusion of Dopants
Shinji Migita et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2013)
Transport properties and electrical device characteristics with the TiMeS computational platform: Application in silicon nanowires
D. Sharma et al.
JOURNAL OF APPLIED PHYSICS (2013)
Unfolding method for first-principles LCAO electronic structure calculations
Chi-Cheng Lee et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2013)
A Proposed Confinement Modulated Gap Nanowire Transistor Based on a Metal (Tin)
Lida Ansari et al.
NANO LETTERS (2012)
A single-atom transistor
Martin Fuechsle et al.
NATURE NANOTECHNOLOGY (2012)
P-doping of Si nanoparticles: The effect of oxidation
Alexandra Carvalho et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2012)
Subthreshold behavior of junctionless silicon nanowire transistors from atomic scale simulations
Lida Ansari et al.
SOLID-STATE ELECTRONICS (2012)
First-Principles Study of Silicon Nanowire Approaching the Bulk Limit
Man-Fai Ng et al.
NANO LETTERS (2011)
Simulation of junctionless Si nanowire transistors with 3 nm gate length
Lida Ansari et al.
APPLIED PHYSICS LETTERS (2010)
Red spectral shift and enhanced quantum efficiency in phonon-free photoluminescence from silicon nanocrystals
W. D. A. M. de Boer et al.
NATURE NANOTECHNOLOGY (2010)
Quantum confinement, core level shifts, and dopant segregation in P-doped Si⟨110⟩ nanowires
Jiaxin Han et al.
PHYSICAL REVIEW B (2010)
Unfolding First-Principles Band Structures
Wei Ku et al.
PHYSICAL REVIEW LETTERS (2010)
Colloquium: Structural, electronic, and transport properties of silicon nanowires
Riccardo Rurali
REVIEWS OF MODERN PHYSICS (2010)
Quantitative prediction of junction leakage in bulk-technology CMOS devices
R. Duffy et al.
SOLID-STATE ELECTRONICS (2010)
Accurate Band Gaps of Semiconductors and Insulators with a Semilocal Exchange-Correlation Potential
Fabien Tran et al.
PHYSICAL REVIEW LETTERS (2009)
Size limits on doping phosphorus into silicon nanocrystals
T. L. Chan et al.
NANO LETTERS (2008)
Experimental study on electron mobility in ultrathin-body silicon-on-insulator metal-oxide-semiconductor field-effect transistors
Ken Uchida et al.
JOURNAL OF APPLIED PHYSICS (2007)
Controllable valley splitting in silicon quantum devices
Srijit Goswami et al.
NATURE PHYSICS (2007)
Ionization energy of donor and acceptor impurities in semiconductor nanowires: Importance of dielectric confinement
Mamadou Diarra et al.
PHYSICAL REVIEW B (2007)
Formation and segregation energies of B and P doped and BP codoped silicon nanowires
Hartwin Peelaers et al.
NANO LETTERS (2006)
Multiple-gate SOI MOSFETs
JP Colinge
SOLID-STATE ELECTRONICS (2004)
Numerical atomic basis orbitals from H to Kr
T Ozaki et al.
PHYSICAL REVIEW B (2004)
Low field electron and hole mobility of SOI transistors fabricated on ultrathin silicon films for deep submicrometer technology application
D Esseni et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2001)