4.7 Article

Tunable ZnO/NiO heterojunction interface for supercapacitors electrodes by piezoelectric modulation

Journal

JOURNAL OF ALLOYS AND COMPOUNDS
Volume 851, Issue -, Pages -

Publisher

ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2020.156902

Keywords

Heterojunction interface; Piezoelectric effect; Pseudocapacitance; ZnO@NiO nanorod Arrays

Funding

  1. Special Foundation for Theoretical Physics Research Program of China [11847076, 51872069]
  2. Zhejiang Provincial Natural Science Foundation of China [LQ19E020005]
  3. Starting Foundation of Hangzhou Dianzi University [KYS205618042]

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Introducing the piezoelectric effect at the ZnO/NiO p-n junction interface enhanced the capacitance of the supercapacitor by 42.8%, showing potential for high-performance energy storage. Engineering the energy band profile of the interface allowed for temporary trapping and subsequent release of electrons during the charge and discharge processes, demonstrating new opportunities for interface engineering in developing high-performance supercapacitors.
Interface is one of the most important issues considered for highly efficient electric energy storage. Herein, the piezoelectric effect was introduced in supercapacitor for high capacitance by tuning the interfacial character at ZnO/NiO p-n junction. With strain-induced piezo-polarization charges, the capacitance was enhanced by 42.8% after applying a 0.12% compressive strain on the flexible electrodes. Such an enhanced property was elucidated by engineering the energy band profile of P-N junction interface. Specifically, electrons can be temporarily trapped and accumulated at the piezo-induced broaden depletion layer at ZnO/NiO interface in charge process until fill the potential well between ZnO and NiO, so that additional electrons can be released during discharge. These results here demonstrate that suitable interface engineering may open up new opportunities in the development of high-performance supercapacitors. (C) 2020 Elsevier B.V. All rights reserved.

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