Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 60, Issue SB, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.35848/1347-4065/abd9ce
Keywords
Liquid Si; Electron beam-induced deposition; Semiconductor
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Funding
- Takahashi Industrial and Economic Research Foundation
- Asahi Glass Foundation
- Sumitomo Foundation
- JSPS KAKENHI [20H02180]
- Grants-in-Aid for Scientific Research [20H02180] Funding Source: KAKEN
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Researchers have successfully demonstrated the conversion of liquid silicon to solid silicon using liquid-phase electron beam-induced deposition, allowing for the direct deposition of semiconducting silicon. This technique has the potential to enable the production of high-resolution silicon nanostructures and access to previously inaccessible devices.
A liquid precursor for the semiconductor, Si, called liquid Si (liq-Si), was synthesized. Although liq-Si is converted to semiconducting Si by heating at 400 degrees C, herein, we demonstrate liquid-to-solid Si conversion without heating using liquid-phase electron beam-induced deposition. This technique realizes the direct deposition of semiconducting Si by irradiating liq-Si with an electron beam. Specifically, at electron beam (diameter, similar to 50 nm) irradiation, a Si deposit with a diameter of approximately 240 nm was obtained. It is expected that the application of this developed method will enable the production of high-resolution Si nanostructures and grant access to previously inaccessible devices.
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