Ion shuttling method for long-range shuttling of trapped ions in MEMS-fabricated ion traps

A large-scale ion trap array fabricated using the microelectromechanical systems (MEMS) technology is expected to be a promising device for building a practical quantum computer. Shuttling trapped ions is essential for operating scalable ion trap structures. This paper proposes an ion shuttling method for a MEMS-fabricated surface ion trap. Change of secular frequency of trapping potential can cause heating and subsequent loss of ions. Therefore, direct current voltage sets to form uniform ion trapping potentials around the ions while shuttling are calculated by simulations. A 32-channel digital-to-analog converter system is developed to apply the calculated voltage sets to the electrodes of the MEMS-fabricated surface ion trap. The shuttling process is experimented using trapped Yb-174(+) ions. The successful round trip of the ion for 1920 mu m is demonstrated using the developed approach.

Automated summary

This paper introduces an ion shuttling method for a MEMS-fabricated surface ion trap, where calculated voltage sets are used to achieve successful ion transportation experiments.