Comparison of characteristics of thin-film transistor with In2O3 and carbon-doped In2O3 channels by atomic layer deposition and post-metallization annealing in O3

Characteristics of thin-film transistors (TFTs) with amorphous In2O3 (InO1.2) and carbon-doped In2O3 (InO1.16C0.04) channels by post-metallization annealing (PMA) process were investigated. The InO1.2 TFT changed from metallic to switching behavior after PMA at 200 degrees C. In contrast, the InO1.16C0.04 TFT exhibited superior properties such as a threshold voltage (V-th) of 3.2 V and a high mobility of 20.4 cm(2) V-1 s(-1) at PMA 150 degrees C because of the reduction of excess oxygen vacancies. A large negative V-th shift was observed for the InO1.2 TFT for 10 800 s in N-2 under zero bias voltage while there was no V-th change for the InO1.16C0.04 TFT.

Automated summary

The characteristics of thin-film transistors (TFTs) with amorphous In2O3 and carbon-doped In2O3 channels after post-metallization annealing (PMA) process were investigated. The In2O3 TFT changed behavior from metallic to switching after PMA at 200 degrees C, while the carbon-doped In2O3 TFT exhibited superior properties due to the reduction of excess oxygen vacancies.