Journal
IEEE TRANSACTIONS ON POWER ELECTRONICS
Volume 35, Issue 12, Pages 13420-13428Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TPEL.2020.2995414
Keywords
Semiconductor device modeling; Temperature measurement; Thermal resistance; Heating systems; Mathematical model; Temperature dependence; Insulated gate bipolar transistors; modeling; semiconductor device modeling; thermal management; thermal resistance
Categories
Funding
- Polish Science Budget Resources under Program Diamentowy Grant
- Ministry of Science and Higher Education Program Regionalna Inicjatywa Doskonalo'sci [006/RID/2018/19]
Ask authors/readers for more resources
In this article, the problem of modeling the thermal properties of the IGBT using a nonlinear compact thermal model is considered. This model has the form of an electrical network. In the proposed model, the influence of the internal temperature of this transistor on the efficiency of heat dissipation is taken into account. The elaborated model form is presented and the estimation method of this model parameters is described. The correctness of the new model is verified experimentally for different cooling conditions and different values of ambient temperature. Additionally, some results of calculations are compared to the results of calculations performed using selected models given in the literature.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
