Journal
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
Volume 67, Issue 12, Pages 2501-2510Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2020.3035172
Keywords
Photonics; Laser beams; Silicon; Photodetectors; Surface treatment; Optical variables measurement; Measurement by laser beam; Diffuse reflectance; photon detection efficiency (PDE); silicon photomultiplier (SiPM); specular reflectance; vacuum ultraviolet (VUV)
Funding
- Chinese Academy of Sciences -Institute of High Energy Physics (CAS-IHEP) Fund for People's Republic of China (PRC)\U.S. Collaboration in High Energy Physics (HEP)
- nEXO from the Office of Nuclear Physics of the Department of Energy in USA
- NSF in USA
- National Science and Engineering Research Council (NSERC) in Canada
- Canada Foundation for Innovation (CFI) in Canada
- Fonds de recherche Nature et technologies du Quebec (FRQNT) in Canada
- National Research Council (NRC) in Canada
- McDonald Institute (CFREF) in Canada
- Institute for Basic Sciences (Korea) (IBS) in South Korea
- Russian Foundation for Basic Research (RFBR) in Russia [18-02-00550]
- CAS in China
- NSFC in China
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Characterization of the vacuum ultraviolet (VUV) reflectance of silicon photomultipliers (SiPMs) is important for large-scale SiPM-based photodetector systems. We report the angular dependence of the specular reflectance in vacuum of SiPMs manufactured by Fondazionc Bruno Kessler (FBK) and Hamamatsu Photonics K.K. (HPK) over wavelengths ranging from 120 to 280 nm. Refractive index and extinction coefficient of the thin silicon-dioxide film deposited on the surface of the FBK SiPMs are derived from reflectance data of an FBK silicon wafer with the same deposited oxide film as SiPMs. The diffuse reflectance of SiPMs is also measured at 193 nm. We use the VUV spectral dependence of the optical constants to predict the reflectance of the FBK silicon wafer and FBK SiPMs in liquid xenon.
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